Teledyne Business Launches Two GaN High Electron Mobility Transistors for Military, Space Applications
A Teledyne Technologies business has unveiled two new ruggedized gallium nitride, high electron mobility transistors designed for high-reliability space, avionics and military applications. The 30-amp TDG650E30B and 15-amp TDG650E15B GaN HEMTs are the latest additions to Teledyne e2v HiRel’s family of 650-volt products based on GaN Systems’ technology.